【Product description】
Silicon Heterojunction Technology (HJT) is based on an emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned monocrystalline silicon wafers, less than 160 μm in thickness, where electrons and holes are photogenerated.
Heterojunction technology (HJT) silicon solar cells have attracted a lot of attention because they can achieve high conversion efficiencies, up to 25%, while using low temperature processing, typically below 250 °C for the complete process. Low processing temperature allows handling of silicon wafers of less than 100 μm thick while maintaining a high yield.
【Process flow】
【Key features】
High Eff and high Voc
Low temperature coefficient 5-8% power output gain
Bifacial structures
【Technical Data】
|
TECHNICAL DATA AND DESIGN |
TEMPERATURE COEFFICIENTS AND SOLDERABILITY |
|||
|
Dimension |
210mm*210mm±0.25 |
TkUoc (%/K) |
-0.27 |
|
|
Thickness |
150+20 μm/-10 μm |
TkIsc(%/K) |
+0.055 |
|
|
Front |
12*0.06mm busbars (silver), 54 fingers (silver) |
TkPMAX(%/K) |
-0.26 |
|
|
Back |
12*0.06mm busbars (silver),74 fingers (silver) |
Peel Strength Minimum |
>1 N/mm |
|
|
ELECTRICAL PARAMETERS at STC |
|||||||
|
No. |
Efficiency (%) |
Pmpp (W) |
Uoc (V) |
Isc (A) |
Umpp (V) |
Impp (A) |
FF (%) |
|
1 |
24.4 |
10.76 |
0.653 |
16.482 |
0.749 |
17.142 |
83.83 |
|
2 |
24.3 |
10.72 |
0.652 |
16.436 |
0.748 |
17.116 |
83.70 |
|
3 |
24.2 |
10.68 |
0.651 |
16.392 |
0.748 |
17.092 |
83.50 |
|
4 |
24.1 |
10.62 |
0.650 |
16.350 |
0.747 |
17.054 |
83.38 |
|
5 |
24.0 |
10.58 |
0.649 |
16.306 |
0.747 |
17.048 |
83.11 |
|
6 |
23.9 |
10.54 |
0.647 |
16.300 |
0.747 |
17.030 |
82.90 |
|
7 |
23.8 |
10.50 |
0.646 |
16.258 |
0.746 |
17.000 |
82.75 |
|
8 |
23.7 |
10.46 |
0.644 |
16.220 |
0.746 |
16.974 |
82.59 |
|
9 |
23.6 |
10.40 |
0.643 |
16.184 |
0.745 |
16.964 |
82.34 |
|
10 |
23.5 |
10.36 |
0.642 |
16.152 |
0.745 |
16.956 |
82.02 |
|
11 |
23.4 |
10.32 |
0.640 |
16.120 |
0.745 |
16.948 |
81.76 |
|
12 |
23.3 |
10.28 |
0.638 |
16.094 |
0.744 |
16.946 |
81.46 |
|
13 |
23.2 |
10.24 |
0.636 |
16.092 |
0.744 |
16.938 |
81.20 |
|
14 |
23.1 |
10.18 |
0.634 |
16.062 |
0.743 |
16.922 |
80.97 |
|
15 |
23.0 |
10.14 |
0.633 |
16.022 |
0.743 |
16.916 |
80.69 |
|
16 |
22.9 |
10.10 |
0.631 |
16.004 |
0.743 |
16.916 |
80.39 |
|
17 |
22.8 |
10.06 |
0.630 |
15.958 |
0.742 |
16.910 |
80.11 |
|
18 |
22.7 |
10.00 |
0.629 |
15.914 |
0.742 |
16.904 |
79.86 |
|
19 |
22.6 |
9.96 |
0.628 |
15.860 |
0.741 |
16.900 |
79.58 |
【Spectral Response】
【Intensity Depence】
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