N Type Mono Bifacial HJT Solar Cell

N Type Mono Bifacial HJT Solar Cell

Silicon Heterojunction Technology (HJT) is based on an emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned monocrystalline silicon wafers, less than 200 μm in thickness, where electrons and holes are photogenerated. The cells process is completed by the deposition of transparent conductive oxides that allow for an excellent metallization. The metallization can be done by a standard screen printing which is widely used in industry for the majority of cells or with innovative technologies.
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Description
Technical Parameters

 

 

Products Description

 

 

 

HJT Cell Core Structure

 

Silicon Heterojunction Technology (HJT) is based on an emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned monocrystalline silicon wafers, less than 200 μm in thickness, where electrons and holes are photogenerated.

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HJT solar cell structure 400

HJT Cell Fabrication Process

 

The cells process is completed by the deposition of transparent conductive oxides that allow for an excellent metallization. The metallization can be done by a standard screen printing which is widely used in industry for the majority of cells or with innovative technologies.

HJT Technology Advantages

 

Heterojunction technology (HJT) silicon solar cells have attracted a lot of attention because they can achieve high conversion efficiencies, up to 25%, while using low temperature processing, typically below 250 °C for the complete process. Low processing temperature allows handling of silicon wafers of less than 100 μm thick while maintaining a high yield.

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Process flow

 

 

 

                       

 

 

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Key features

 

 

 

 

High Eff and high Voc

Low temperature coefficient 5-8% power output gain

Bifacial structures

 

【Technical Data】

 

HJT solar cell Technical Data 1R
 

TECHNICAL DATA AND DESIGN TEMPERATURE COEFFICIENTS AND SOLDERABILITY
Dimension 156.75mm*156.75mm±0.25 TkUoc (%/K) -0.27
Thickness 190±30 µm TkIsc (%/K) +0.05
Front 5 Busbars TkPMAX (%/K) -0.336
Back 5 Busbars Peel Strength Minimum >1.4N/mm

 

HJT solar cell Technical Data 2R

 

No. Efficiency (%) Pmpp (W) Uoc (V) Isc (A) FF (%)
1 23.50 5.74 0.743 9.6 80.53
2 23.40 5.72 0.741 9.592 80.43
3 23.30 5.70 0.74 9.585 80.33
4 23.20 5.67 0.738 9.577 80.24
5 23.10 5.65 0.737 9.57 80.14
6 23.0 5.63 0.735 9.562 80.04
7 22.90 5.60 0.733 9.554 79.94
8 22.80 5.58 0.732 9.547 79.84
9 22.70 5.55 0.73 9.539 79.75
10 22.60 5.53 0.729 9.532 79.65
11 22.50 5.51 0.727 9.524 79.55
12 22.40 5.48 0.725 9.516 79.45
13 22.30 5.46 0.724 9.509 79.36
14 22.20 5.44 0.722 9.501 79.26
15 22.10 5.41 0.721 9.494 79.16
16 22.00 5.39 0.719 9.486 79.06
17 21.90 5.37 0.717 9.479 78.97
18 21.80 5.35 0.716 9.471 78.87
19 21.70 5.32 0.714 9.463 78.77
20 21.60 5.30 0.712 9.456 78.67
21 21.50 5.28 0.711 9.448 78.57

 

 

Certificate

 

 

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