【Product description】
N-type Mono bifacial PERT (passivated emitter rear totally diffused) silicon solar cells possesses high and stabilized conversion efficiencies.
N-type silicon solar cells are considered as promising alternatives to p-type solar cells for next generation highly efficient solar cells thanks to their ability to withstand light-induced degradation and to their higher tolerance to common metal impurities.
The n type bifacial PERT solar cell can be manufactured with process flow by using ion implant for single-sided doping for excellent emitter junction quality and uniformity, a single thermal anneal, integrated AlOx/ SiNx passivation layer and screen printed Ag grid on front and rear.
【Process flow】
【Key features】
High conversion efficiency with high reliability
No light-induced degradation
Uniform cell performance with stable process control
Both sides can generate electricity
Excellent power generation performance under low irradiation
Low hot spot risk
【Technical Data】
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