Products Introduction
Semi-insulating SiC substrates offer high resistivity and excellent thermal properties, making them suitable for GaN heteroepitaxial growth and high-frequency RF semiconductor applications. They are widely used in HEMT-based devices for advanced communication systems, including 5G infrastructure.
Their excellent optical and material properties also support emerging applications in optoelectronics and wearable electronics. 12-inch substrates provide potential for next-generation applications such as AR glasses and other advanced optical devices.
Specifications
| 6-inch | |
|---|---|
| Diameter | 150.0mm+0mm/-0.2mm |
| Surface Orientation | {0001}±0.2° |
| Primary Flat Orientation | / |
| Secondary Flat Orientation | / |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1100>±1.0° |
| Notch Depth | None1mm+0.25mm/-0mm from edge |
| Notch Angle | 90°+5°/-1° |
| Thickness | 500.0um±25.0um |
| Type | Semi-insulating |
| 8-inch | |
|---|---|
| Diameter | 200.0mm+0mm/-0.5mm |
| Surface Orientation | {0001}±0.2° |
| Primary Flat Orientation | / |
| Secondary Flat Orientation | / |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1100>±1.0° |
| Notch Depth | None1mm+0.25mm/-0mm from edge |
| Notch Angle | 90°+5°/-1° |
| Thickness | 500.0um±25.0um |
| Type | Semi-insulating |
| 12-inch | |
|---|---|
| Diameter | 300.0mm+0mm/-0.5mm |
| Surface Orientation | {0001}±0.5° |
| Primary Flat Orientation | / |
| Secondary Flat Orientation | / |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1100>±5.0° |
| Notch Depth | None1mm+0.25mm/-0mm from edge |
| Notch Angle | 90°+5°/-1° |
| Thickness | 750.0um±25.0um |
| Type | Semi-insulating |
Certificate
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