Products Introduction
P-type SiC substrates are designed for homoepitaxial growth and the development of ultra-high-voltage power semiconductor devices. With excellent electrical and thermal characteristics, they are suitable for demanding high-power applications, including ultra-high-voltage power transmission and smart grid infrastructure.
These substrates also support applications in rail transit, industrial power systems, and other high-power electrical equipment where high voltage capability, reliability, and efficient power conversion are required.
Specifications
| 6-inch | |
|---|---|
| Diameter | 150.0mm+0mm/-0.2mm |
| Surface Orientation | 4°toward<1120>±0.5° |
| Primary Flat Length | 47.5mm±1.5mm |
| Primary Flat Orientation | <1120>±5.0° |
| Notch Orientation | / |
| Notch Angle | / |
| Notch Depth | / |
| Thickness | 350.0um±25.0um |
| Polytype | 4H |
| Type | p-type |
| 8-inch | |
|---|---|
| Diameter | 200.0mm+0mm/-0.2mm |
| Surface Orientation | 4°toward<1120>±0.5° |
| Primary Flat Length | Notch |
| Primary Flat Orientation | / |
| Notch Orientation | <1100>±1.0° |
| Notch Angle | 90°+5°/-1° |
| Notch Depth | 1.0mm+0.25mm/-0mm |
| Thickness | 350.0um±25.0um |
| Polytype | 4H |
| Type | p-type |
| 12-inch | |
|---|---|
| Diameter | 300.0mm±0.5mm |
| Surface Orientation | 4°toward<1120>±0.5° |
| Primary Flat Length | Notch |
| Primary Flat Orientation | / |
| Notch Orientation | <1100>±5.0° |
| Notch Angle | 90°+5°/-1° |
| Notch Depth | 1.0mm+0.25mm/-0mm |
| Thickness | 750.0um±25.0um |
| Polytype | 4H |
| Type | p-type |
Certificate
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