Products Introduction
N-type SiC substrates are engineered for homoepitaxial growth in advanced power semiconductor manufacturing. With superior electrical and thermal performance, this high-performance SiC substrate is suitable for high-power applications across electric vehicles, photovoltaic systems, wind power, and other new energy technologies.
The product range includes 6-inch and 8-inch SiC wafers for volume production and global supply, with 12-inch substrate production capability available for next-generation power semiconductor applications.
Specifications
| 6-inch | |
|---|---|
| Diameter | 150.0mm+0mm/-0.2mm |
| Surface Orientation | 4°toward<1120>±0.5° |
| Primary Flat Length | 47.5 mm ±1.5 mm |
| Primary Flat Orientation | <1120>±1.0° |
| Notch Orientation | / |
| Notch Angle | / |
| Notch Depth | / |
| Secondary Flat | N/A |
| Thickness | 350.0um±25.0um |
| Polytype | 4H |
| Type | n-type |
| 8-inch | |
|---|---|
| Diameter | 200.0mm+0mm/-0.5mm |
| Surface Orientation | 4°toward<1120>±0.5° |
| Primary Flat Length | Notch |
| Primary Flat Orientation | / |
| Notch Orientation | <1100>±1.0° |
| Notch Angle | 90°+5°/-1° |
| Notch Depth | 1.0mm+0.25mm/-0mm |
| Secondary Flat | N/A |
| Thickness | 500.0um±25.0um |
| Polytype | 4H |
| Type | n-type |
| 12-inch | |
|---|---|
| Diameter | 300.0mm+0mm/-0.5mm |
| Surface Orientation | 4°toward<1120>±0.5° |
| Primary Flat Length | Notch |
| Primary Flat Orientation | / |
| Notch Orientation | <1100>±5.0° |
| Notch Angle | 90°+5°/-1° |
| Notch Depth | 1.0mm+0.25mm/-0mm |
| Secondary Flat | N/A |
| Thickness | 750.0um±25.0um |
| Polytype | 4H |
| Type | n-type |
Certificate
Hot Tags: 4h n-type sic substrate, China, suppliers, manufacturers, factory, made in China
