N Type Full Square Monocrystalline Solar Wafer

N Type Full Square Monocrystalline Solar Wafer

In solar PV industry, wafer technology transition comes a shift from pseudo square 156.75x156.75mm M2 to larger wafer sizes at full square 158.75x158.75mm and this includes p-type and n-type mono-Si wafers. The state-of-art Full Square Mono Wafers have maximized the light exposure to the same level of multi wafer by expanding the square measure. The wafers are always fully square so that they fit the PV module in an optimal way.
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Description
Technical Parameters

CZ silicon crystal growth

 

158.75mm full square monocrystalline solar wafer

In solar PV industry, wafer technology transition comes a shift from pseudo square 156.75x156.75mm M2 to larger wafer sizes at full square 158.75x158.75mm and this includes p-type and n-type mono-Si wafers.

The state-of-art Full Square Mono Wafers have maximized the light exposure to the same level of multi wafer by expanding the square measure. The wafers are always fully square so that they fit the PV module in an optimal way. 

1Material properties

  

Conductivity   type

  

N-type

Napson   EC-80TPN

  

Dopant

  

Phosphorus

- 

Oxygen  concentration[Oi]

≦8E+17   at/cm3

FTIR (ASTM   F121-83)

Carbon  concentration[Cs]

≦5E+16   at/cm3

FTIR (ASTM   F123-91)

Etch pit   density(dislocation density)

≦500   cm-3

Preferential   Etch Techniques(ASTM   F47-88)

Surface   orientation

<100>±3°

X-ray   Diffraction Method (ASTM F26-1987)

Orientation   of pseudo square sides

<010>,<001>±3°

X-ray   Diffraction Method (ASTM F26-1987)

2Electrical properties

Property  

Specification  

Inspection   Method

Resistivity

0.3-2.1 Ω.cm

1.0-7.0 Ω.cm

Wafer inspection system

MCLT (minority carrier lifetime)

≧1000 μs(Resistivity 0.3-2.1 Ω.cm)
  ≧500 μs(Resistivity 1.0-7.0 Ω.cm)

Sinton transient

3Geometry

 

Property

Specification    

Inspection     Method

Geometry

Full   square

 

Wafer Side length

158.75±0.25 mm

wafer inspection system

Wafer Diameter

φ223±0.25 mm

wafer inspection system

Angle between adjacent sides

90° ± 0.2°

wafer inspection system

Thickness

180 ﹢ 20/﹣10 µm;

170﹢ 20/﹣10 µm

wafer inspection system

TTV (Total thickness variation)

≤ 27 µm

wafer inspection system

 

 

 image

4Surface properties

Property

Specification    

Inspection     Method

Cutting method

DW

--

Surface    quality

as cut   and cleaned, no visible contamination, (oil or grease, finger prints, soap   stains, slurry stains, epoxy/glue stains are not allowed)

wafer   inspection system

Saw marks / steps

≤ 15µm

wafer   inspection system

Bow

≤ 40 µm

wafer   inspection system

Warp

≤ 40   µm

wafer   inspection system

Chip

depth   ≤0.3mm and length ≤ 0.5mm  Max 2/pcs;   no V-chip

Naked eyes or wafer inspection system

Micro cracks / holes

Not   allowed

wafer   inspection system

 

 

 

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