Products Introduction
Material Properties
| Dust-Free Specifications | 6" | 8" | 12" |
| Growth Method | CZ | CZ | CZ |
| Diameter (mm) | 150±0.5 | 200±0.5 | 300±0.5 |
| Type/Dopant: | P/Boron or N/Ph | P/Boron or N/Ph | P/Boron or N/Ph |
| Thickness (μm) | 625±25/675±25 | 725±25 | 775±25 |
| Resistivity | 1–100Ω | 1–100Ω | 1–100Ω |
| Flat/Notch | Flats/Notch | Flats/Notch | Notch |
| Surface Finish | As-Cut/Lapped/Etched/SSP/DSP | As-Cut/Lapped/Etched/SSP/DSP | As-Cut/Lapped/Etched/SSP/DSP |
| Customized Specifications Available | |||
Dust-free wafers are designed for situations where equipment stability and process consistency matter most. They're not intended for final chip production, but they help keep semiconductor tools clean, calibrated, and running smoothly before product wafers enter the line. With precise diameter control, a wide resistivity range, and multiple surface finishes, these wafers are a reliable and cost-effective choice for fabs and research labs.
Product features
Sizes Available: 6", 8", and 12"
Growth Method: CZ (Czochralski) process
Diameter Tolerance: 150±0.5 mm, 200±0.5 mm, 300±0.5 mm
Doping Options: P-type (Boron) or N-type (Phosphorus)
Thickness: 625–775 µm (depending on wafer size)
Resistivity Range: 1–100 Ω
Flat/Notch Options: Flats or Notch
Surface Finish: As-Cut, Lapped, Etched, SSP, DSP
Customizable: Tailored specifications available
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