Source: Hanergy
BEIJING, November 19th, 2019 - Hanergy has announced that its Chengdu Research & Development Center has once again broken the world record for its silicon heterojunction (SHJ) technology. The record-setting 25.11% conversion efficiency (surface area 244.45 cm²), has been acknowledged by the Institute for Solar Energy Research in Hamelin (ISFH), with the German testing body certifying that the company has surpassed its own previous 6-inch silicon cell world record of 24.85%.
Hanergy's record-breaking SHJ solar technology utilizes low-cost ITO transparent conductive films and easy-to-purchase screen-printed electrodes, reducing the cost of mass production and allowing greater freedom for market expansion. This technological breakthrough was achieved using low-cost, highly efficient, fully localized production equipment and a production process that can be directly adapted for mass production.
SHJ technology has been recognized as one of the most competitive next-generation solar technologies, with its excellent weather resistance, 30+ year lifespan, stable performance and high conversion efficiency. Combined with no light decay, no potential induced attenuation (PID) and high-temperature power output, SHJ technology is an ideal solution for ground power stations, distributed power stations, vertical installations, fishery or agricultural complementary photovoltaic power stations, green-powered building and mobile energy projects.