N-Type M12 Monocrystalline Silicon Wafer Specification

Crafted with premium Czochralski growth and phosphorus doping, N-Type M12 monocrystalline silicon wafer comes in 210×210mm large pseudo square size to expand light-receiving area and upgrade module power generation efficiency. It boasts low dislocation density, stable resistivity and ultra-long minority carrier lifetime, paired with precise dimensional accuracy and superior surface finish. Fully adaptable to HJT, TOPCon and other advanced cell processes, it is an ideal base material for manufacturing high-efficiency and high-power photovoltaic modules.

The N-Type M12 Monocrystalline Silicon Wafer adopts a large pseudo square 210×210 mm format (φ295 mm diameter), increasing the active area and boosting power output for high-efficiency PV modules. Grown using the CZ method and doped with phosphorus, it features a <100> surface orientation, low dislocation density (≤500 cm⁻²), and N-type conductivity. With a resistivity range of 1.0–7.0 Ω·cm and minority carrier lifetime ≥1000 µs, it is ideal for advanced solar cell technologies such as TOPCon and HJT. The M12 wafer's optimized geometry and surface quality ensure excellent performance in next-generation high-power modules.