Optimized for high-efficiency solar applications, the N-Type M6 Monocrystalline Silicon Wafer features a pseudo-square 166×166 mm design with superior material properties. Manufactured using CZ method with phosphorus doping, it delivers excellent crystal quality with <100> orientation and low defect density (≤500 cm⁻²). The wafer offers N-type conductivity with 1.0-7.0 Ω·cm resistivity and ≥1000 µs carrier lifetime, making it ideal for TOPCon and heterojunction cell technologies. Its precise geometry (φ223 mm diameter, ≤27 µm TTV) and strict surface quality standards ensure optimal performance in photovoltaic modules. The M6 size provides the perfect balance between cell efficiency and manufacturing productivity for modern solar production lines.
1. Material properties
|
Property |
Specification |
Inspection Method |
|
Growth method |
CZ |
|
|
Crystallinity |
Monocrystalline |
Preferential Etch Techniques(ASTM F47-88) |
|
Conductivity type |
N-type |
Napson EC-80TPN |
|
Dopant |
Phosphorus |
- |
|
Oxygen concentration[Oi] |
≦8E+17 at/cm3 |
FTIR (ASTM F121-83) |
|
Carbon concentration[Cs] |
≦5E+16 at/cm3 |
FTIR (ASTM F123-91) |
|
Etch pit density(dislocation density) |
≦500 cm-2 |
Preferential Etch Techniques(ASTM F47-88) |
|
Surface orientation |
<100>±3° |
X-ray Diffraction Method (ASTM F26-1987) |
|
Orientation of pseudo square sides |
<010>,<001>±3° |
X-ray Diffraction Method (ASTM F26-1987) |
2.Electrical properties
|
Property |
Specification |
Inspection Method |
|
Resistivity |
1.0-7.0 Ω.cm
|
Wafer inspection system |
|
MCLT (minority carrier lifetime) |
≥1000 µs
|
Sinton BCT-400
Transient
(with injection level: 5E14 cm-3)
|
3.Geometry
|
Property |
Specification |
Inspection Method |
|
Geometry |
pseudo square |
|
|
Bevel edge shape
|
round | |
|
Wafer Side length |
166±0.25 mm
|
wafer inspection system |
|
Wafer Diameter |
φ223±0.25 mm |
wafer inspection system |
|
Angle between adjacent sides |
90° ± 0.2° |
wafer inspection system |
|
Thickness |
180﹢ 20/﹣10 µm
175﹢ 20/﹣10 µm
170﹢ 20/﹣10 µm
160﹢ 20/﹣10 µm
150﹢ 20/﹣10 µm
|
wafer inspection system |
|
TTV (Total thickness variation) |
≤ 27 µm |
wafer inspection system |
4.Surface properties
|
Property |
Specification |
Inspection Method |
|
Cutting method |
DW |
-- |
|
Surface quality |
as cut and cleaned, no visible contamination, (oil or grease, finger prints, soap stains, slurry stains, epoxy/glue stains are not allowed) |
wafer inspection system |
|
Saw marks / steps |
≤ 15µm |
wafer inspection system |
|
Bow |
≤ 40 µm |
wafer inspection system |
|
Warp |
≤ 40 µm |
wafer inspection system |
|
Chip |
depth ≤0.3mm and length ≤ 0.5mm Max 2/pcs; no V-chip |
Naked eyes or wafer inspection system |
|
Micro cracks / holes |
Not allowed |
wafer inspection system |
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