P Type M10 Monocrystalline Solar Wafer

P Type M10 Monocrystalline Solar Wafer

M10 with dimension of 182mmx182mm monocrystalline silicon solar wafer with diameter of 247mm can make higher power solar cells.
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Description
Technical Parameters

 

158.75mm Full Square Monocrystalline Solar Wafer 2

 

P type monocrystalline wafer 1

P type monocrystalline wafer 2

210mmx210mm M12 monocrystalline silicon solar wafer with diameter of 295mm is 80.5% bigger than M2 wafer.

 

1Material properties

Property

Specification

Inspection   Method

Growth   method

CZ

 

Crystallinity

Monocrystalline

Preferential   Etch Techniques(ASTM   F47-88)

Conductivity   type

P-type

Napson   EC-80TPN

P/N

Dopant

Boron, Gallium

-

Oxygen  concentration[Oi]

≦8E+17   at/cm3

FTIR (ASTM   F121-83)

Carbon  concentration[Cs]

≦5E+16   at/cm3

FTIR (ASTM   F123-91)

Etch pit   density(dislocation density)

≦500 cm-3

Preferential   Etch Techniques(ASTM   F47-88)

Surface   orientation

<100>±3°

X-ray   Diffraction Method (ASTM F26-1987)

Orientation   of pseudo square sides

<010>,<001>±3°

X-ray   Diffraction Method (ASTM F26-1987)

2Electrical properties

Property

Specification

Inspection   Method

Resistivity

0.5-1.5 Ωcm

Wafer inspection system

MCLT (minority carrier lifetime)

≧50 μs

Sinton BCT-400

(with injection level: 1E15 cm-3)

3Geometry

Property

Specification    

Inspection     Method

Geometry

Full   square

 

Wafer Side length

182±0.25 mm

wafer inspection system

Wafer Diameter

φ247±0.25 mm

wafer inspection system

Angle between adjacent sides

90° ± 0.2°

wafer inspection system

Thickness

180 ﹢ 20/﹣10 µm;

170﹢ 20/﹣10 µm

wafer inspection system

TTV (Total thickness variation)

≤ 27 µm

wafer inspection system

 

 image

4Surface properties

Property

Specification    

Inspection     Method

Cutting method

DW

--

Surface    quality

as cut   and cleaned, no visible contamination, (oil or grease, finger prints, soap   stains, slurry stains, epoxy/glue stains are not allowed)

wafer   inspection system

Saw marks / steps

≤ 15µm

wafer   inspection system

Bow

≤ 40 µm

wafer   inspection system

Warp

≤ 40   µm

wafer   inspection system

Chip

depth   ≤0.3mm and length ≤ 0.5mm  Max 2/pcs;   no V-chip

Naked eyes or wafer inspection system

Micro cracks / holes

Not   allowed

wafer   inspection system

 

 

 

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