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MBB 12BB P Type Mono PERC Solar Cell

This family solar cells employ both the MBB technology and the PERC technology on monocrystalline wafer. MBB (Multi bus-bar) means that a solar cell is equipped with 12 or 16 busbars instead of 4, 5 or 6. Solar modules with MBB technology provide a higher power output and a higher reliability. For PERC technology solar cell, an additional two steps are employed to the standard back surface field (BSF) during the manufacturing process. First, a rear surface passivation film which is SiO2 or Al2O3 is applied. Second, lasers or chemicals are used to ablate the rear passivation stack and create tiny lines or dots in the film so that metallization between silicon substrate and aluminum paste can be formation.
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【Product description】

This family solar cells employ both the MBB technology and the PERC technology on monocrystalline wafer.

MBB (Multi bus-bar) means that a solar cell is equipped with 12 or 16 busbars instead of 4, 5 or 6. Solar modules with MBB technology provide a higher power output and a higher reliability.

For PERC technology solar cell, an additional two steps are employed to the standard back surface field (BSF) during the manufacturing process. First, a rear surface passivation film which is SiO2 or Al2O3 is applied. Second, lasers or chemicals are used to ablate the rear passivation stack and create tiny lines or dots in the film so that metallization between silicon substrate and aluminum paste can be formation.


MBB 12BB p type mono PERC solar cell dimension

Top and bottom dimension of 12BB P Type Mono PERC Solar Cell


image

 cross section of stand and PERC solar cell


Process flow


image

 

Key features

Higher output power

Excellent low-light performance

Lower temperature coefficient

High reflectance wire design with less shading

Mechanical load performance increased

Risk of micro crack decreased

 

Technical Data


TECHNICAL DATA AND DESIGN


TEMPERATURE COEFFICIENTS AND SOLDERABILITY

Dimension

156.75mm*156.75mm±0.25


TkUoc (%/K)

-0.35

Thickness

190±30 μm


TkIsc  (%/K)

+0.04

Front

12 Busbars


TkPMAX  (%/K)

-0.40

Back

12 Busbars




  

ELECTRICAL PARAMETERS at STC

No.

Efficiency (%)

Pmpp (W)

Uoc (V)

Isc (A)

FF (%)

1

22.50%

5.50

0.683

9.851

81.85

2

22.40%

5.47

0.682

9.830

81.68

3

22.30%

5.45

0.681

9.817

81.57

4

22.20%

5.43

0.680

9.808

81.45

5

22.10%

5.40

0.679

9.798

81.19

6

22.00%

5.38

0.678

9.786

81.10

7

21.90%

5.35

0.676

9.769

80.98

8

21.80%

5.33

0.675

9.756

80.95

9

21.70%

5.30

0.673

9.744

80.83

10

21.60%

5.28

0.670

9.734

80.99

11

21.50%

5.25

0.669

9.712

80.87

12

21.40%

5.23

0.668

9.692

80.83

13

21.30%

5.20

0.667

9.674

80.67

14

21.20%

5.18

0.666

9.661

80.56

15

21.10%

5.16

0.665

9.652

80.43

16

21.00%

5.13

0.664

9.642

80.16

17

20.90%

5.11

0.663

9.628

80.07

18

20.80%

5.08

0.661

9.613

79.95

19

20.70%

5.06

0.660

9.598

79.89

20

20.60%

5.03

0.658

9.584

79.77

21

20.50%

5.01

0.655

9.578

79.90

 

 


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    Fax:+86-571-56772663
    Office:Room 411, Tower 1, No.19 Xintang Road, Jianggan District, Hangzhou, China
    E-mail:info@dsneg.com

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