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N Type HJT Solar Cell

N Type HJT Solar Cell
Silicon Heterojunction Technology (HJT) is based on an emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned monocrystalline silicon wafers, less than 200 μm in thickness, where electrons and holes are photogenerated. The cells process is completed by the deposition of transparent conductive oxides that allow for an excellent metallization. The metallization can be done by a standard screen printing which is widely used in industry for the majority of cells or with innovative technologies.
Product Details

【Product description】

Silicon Heterojunction Technology (HJT) is based on an emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned monocrystalline silicon wafers, less than 200 μm in thickness, where electrons and holes are photogenerated.

The cells process is completed by the deposition of transparent conductive oxides that allow for an excellent  metallization. The metallization can be done by a standard screen printing which is widely used in industry for the majority of cells or with innovative technologies.

Heterojunction technology (HJT) silicon solar cells have attracted a lot of attention because they can achieve high conversion efficiencies, up to 25%, while using low temperature processing, typically below 250 °C for the complete process. Low processing temperature allows handling of silicon wafers of less than 100 μm thick while maintaining a high yield.


 HJT solar cell structure 400     Profile2

 

                                       

Process flow


Process flow A black

 

Key features

High Eff and high Voc

Low temperature coefficient 5-8% power output gain

Bifacial structures

 

Technical Data


HJT solar cell Technical Data 1R


HJT solar cell Technical Data 2R


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