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P Type Monocrystalline Solar Wafer

P Type Monocrystalline Solar Wafer

The mono-crystalline wafer production flow consists of cutting, cleaning and sorting procedures. Currently, more than 80% of the worldwide Cz-Si crystal production capacity for PV is dedicated to p-typ .
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Monocrystalline wafer 1


P type monocrystalline wafer 1


P type monocrystalline wafer 2


 The mono-crystalline wafer production flow consists of cutting, cleaning and sorting procedures. Currently, more than 80% of the worldwide Cz-Si crystal production capacity for PV is dedicated to p type.


1      Material properties

 

Property

Specification

Inspection   Method

Growth   method

CZ


Crystallinity

Monocrystalline

 

Preferential   Etch TechniquesASTM   F47-88

Conductivity   type

N-type

Napson   EC-80TPN

P/N

Dopant

 

Boron

 

-

Oxygen  concentration[Oi]

9E+17   at/cm3

FTIR (ASTM   F121-83)

Carbon  concentration[Cs]

5E+16   at/cm3

FTIR (ASTM   F123-91)

Etch pit   density(dislocation density)

500 cm-3

Preferential   Etch TechniquesASTM   F47-88

Surface   orientation

<100>±3°

X-ray   Diffraction Method (ASTM F26-1987)

Orientation   of pseudo square sides

<010>,<001>±3°

X-ray   Diffraction Method (ASTM F26-1987)

 

2      Electrical properties

 

Property

Specification

Inspection   Method

Resistivity

1-3 Ωcm (After anneal)

Wafer inspection system

MCLT (minority carrier lifetime)

20 μs

Sinton QSSPC

 

3      Geometry

 

Property

Specification

Inspection   Method

Geometry

Pseudo square


Bevel edge shape

Round


Wafer size

(Side length*side length * diameter

M0: 156*156*ϕ210 mm

M1:   156.75*156.75*   ϕ205mm

M2:   156.75*156.75*   ϕ210   mm

Wafer inspection system

Angle between adjacent sides

90±3°

Wafer inspection system

 


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    Office:Room 411, Tower 1, No.19 Xintang Road, Jianggan District, Hangzhou, China
    E-mail:info@dsneg.com

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