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N Type Monocrystalline Solar Wafer

N Type Monocrystalline Solar Wafer

The fact that cell technologies featuring the highest efficiencies in industrial production are based on n-type Cz-Si wafer is a striking demonstration of why n-type wafers are the most suitable material for high-efficiency solar cells. Going more into details, there are some physical reasons for the superiority of n-type versus p-type.
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CZ silicon crystal growth

Monocrystalline wafer 1


The fact that cell technologies featuring the highest efficiencies in industrial production are based on N type Cz-Si wafer is a striking demonstration of why n-type wafers are the most suitable material for high-efficiency solar cells. Going more into details, there are some physical reasons for the superiority of N type versus P type, the most important are:

  • due to absence of boron, there is no light induced degradation (LID) occurring in p-type Si wafers, due to boron-oxygen complexes

  • as N type Si is less sensitive to prominent metallic impurities, in general the minority carrier diffusion lengths in n-type Cz-Si are significantly higher compared to p-type Cz-Si

  • N type Si is less prone to degradation during high temperature processes such as B-diffusion.

 

 

1      Material properties

 

Property

Specification

Inspection   Method

Growth   method

CZ


Crystallinity

Monocrystalline  

Preferential   Etch TechniquesASTM   F47-88

Conductivity   type

N-type

Napson   EC-80TPN

Dopant

Phosphorus

-

Oxygen  concentration[Oi]

8E+17   at/cm3

FTIR (ASTM   F121-83)

Carbon  concentration[Cs]

5E+16   at/cm3

FTIR (ASTM   F123-91)

Etch pit   density(dislocation density)

500   cm-3

Preferential   Etch TechniquesASTM   F47-88

Surface   orientation

<100>±3°

X-ray   Diffraction Method (ASTM F26-1987)

Orientation   of pseudo square sides

<010>,<001>±3°

X-ray   Diffraction Method (ASTM F26-1987)

 

2      Electrical properties

 

Property  

Specification  

Inspection   Method

Resistivity

0.2-2.0 Ωcm

0.8-5 Ωcm

1-13 Ωcm

Other resistivity

Wafer inspection system

MCLT (minority carrier lifetime)

1000 μs(Resistivity   > 1 Ωcm)
 
500 μs(Resistivity < 1 Ωcm)

Sinton transient

 

3      Geometry

 

Property

Specification  

Inspection   Method

Geometry

Pseudo square


Bevel edge shape

Round


Wafer size

(Side length*side length * diameter

M0:   156*156*ϕ210   mm

M1:   156.75*156.75*   ϕ205mm

M2: 156.75*156.75* ϕ210 mm

Wafer inspection system

Angle between adjacent sides

90±3°

Wafer inspection system



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    Fax:+86-571-56772663
    Office:Room 411, Tower 1, No.19 Xintang Road, Jianggan District, Hangzhou, China
    E-mail:info@dsneg.com

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