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Black Silicon Surface P Type Polycrystalline Solar Wafer Including 166mm*166mm

Black Silicon Surface P Type Polycrystalline Solar Wafer Including 166mm*166mm

Metal Assisted Chemical etching (MACE) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film.
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P type black silicon wafer 7


P type black silicon wafer in cascade 3


Metal Assisted Chemical etching (MACE) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film.

 

In a well accepted model describing MACE process, the oxidant is preferred to be reduced at the surface of metal catalyst, and holes (h+) are injected from metal catalyst to Si or electrons (e−) are transferred from Si to metal catalyst. Si underneath metal catalyst has the maximum hole concentration, therefore the oxidation and dissolution of Si occur preferentially underneath metal catalyst. 

 

Solar energy conversion efficiency is found to be increased when SiNWs with high aspect ratio are employed in the surface of slar light irradiation.

 

 

1      Surface condition

 

Parameter

Process

Reflectance

Front Side

Surface condition

Metal Assisted Chemical Etching

Low

Back Side

Surface condition

Polished or textured

High or low

  

2      Material properties

 

Property

Specification

Inspection   Method

Growth   method

directional   solidification

XRD

Crystallinity

polycrystalline

Preferential   Etch TechniquesASTM   F47-88

Conductivity   type

P-type

Napson   EC-80TPN

P/N

Dopant

Boron

-

Oxygen concentration[Oi]

1E+17   at/cm3

FTIR (ASTM   F121-83)

Carbon concentration[Cs]

1E+18   at/cm3

FTIR (ASTM   F123-91)

 

3      Electrical properties

 

Property

Specification

Inspection   Method

Resistivity

0.5-2 Ωcm (After anneal)

Wafer inspection system

MCLT (minority carrier lifetime)

2 μs

Sinton QSSPC

 

4      Geometry

 

Property

Specification

Inspection   Method

Geometry

Square or   Rectangle

Wafer inspection system

Bevel edge shape

Line

Wafer inspection system

Wafer size

(Side length*side length)

156mm*156mm

157mm*186mm

166mm*166mm

Wafer inspection system

Angle between adjacent sides

90±3°

Wafer inspection system

 


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    Office:Room 411, Tower 1, No.19 Xintang Road, Jianggan District, Hangzhou, China
    E-mail:info@dsneg.com

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